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BUK7107-40ATC
N-channel TrenchPLUS standard level FET
Rev. 02 -- 6 February 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for clamping and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Allows responsive temperature monitoring due to integrated temperature sensor Low conduction losses due to low on-state resistance Q101 compliant
1.3 Applications
Electrical Power Assisted Steering (EPAS) Variable Valve Timing for engines
1.4 Quick reference data
Table 1. Symbol VDS ID Quick reference Parameter drain current Conditions VGS = 10 V; Tmb = 25 C; see Figure 2; see Figure 3; VGS = 10 V; ID = 50 A; Tj = 25 C; see Figure 7; see Figure 8 IF = 250 A; Tj > -55 C; Tj < 175 C IF = 250 A; Tj = 25 C Min [1] [2] Typ Max 40 75 Unit V A drain-source voltage Tj 25 C; Tj 175 C;
Static characteristics RDSon drain-source on-state resistance temperature sense diode temperature coefficient temperature sense diode forward voltage 5.8 7 m
SF(TSD)
-1.4
-1.54
-1.68
mV/K
VF(TSD)
648
658
668
mV
VF(TSD)hys temperature sense diode forward voltage hysteresis
[1] [2] Voltage is limited by clamping.
IF < 250 A; Tj = 25 C; IF > 125 A
25
32
50
mV
Continuous current is limited by package.
NXP Semiconductors
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 4 5 mb Pinning information Symbol G A D K S D Description gate anode drain cathode source mounting base; connected to drain
12 3 45
MBL306
Simplified outline
mb
Graphic symbol
d a
g
s
k
SOT426 (D2PAK)
3. Ordering information
Table 3. Ordering information Type number Package Name Description BUK7107-40ATC D2PAK plastic single-ended surface-mounted package (D2PAK); 5 leads (one lead cropped)
Version SOT426
BUK7107-40ATC_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 February 2009
2 of 15
NXP Semiconductors
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4. Symbol VDS VDGS VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 C; VGS = 10 V; see Figure 2; see Figure 3; Tmb = 100 C; VGS = 10 V; see Figure 2 IDM Ptot IDG(CL) IGS(CL) peak drain current total power dissipation drain-gate clamping current gate-source clamping current Tmb = 25 C; tp 10 s; pulsed; see Figure 3 Tmb = 25 C; see Figure 1 pulsed; tp = 5 ms; = 0.01 continuous pulsed; tp = 5 ms; = 0.01 [2] [3] [3] Conditions Tj 25 C; Tj 175 C; IDG = 250 A [1] Min -20 -100 Max 40 40 20 140 75 75 560 272 50 10 50 100 Unit V V V A A A A W mA mA mA V
In accordance with the Absolute Maximum Rating System (IEC 60134).
Visol(FET-TSD) FET to temperature sense diode isolation voltage Tstg Tj IS ISM Clamping EDS(CL)S non-repetitive drain-source clamping energy electrostatic discharge voltage
[1] [2] [3]
storage temperature junction temperature source current peak source current Tmb = 25 C; Tmb = 25 C; tp 10 s; pulsed; Tmb = 25 C ID = 75 A; VDS 40 V; VGS = 10 V; RGS = 10 k; unclamped; Tj(init) = 25 C [2] [3]
-55 -55 -
175 175 140 75 560 1.4
C C A A A J
Source-drain diode
Electrostatic Discharge Vesd HBM; C = 100 pF; R = 1.5 k 6 kV
Voltage is limited by clamping. Current is limited by power dissipation chip rating. Continuous current is limited by package.
BUK7107-40ATC_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 February 2009
3 of 15
NXP Semiconductors
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
120 Pder (%) 80
03na19
160 ID (A) 120
03ni63
80
40
40
Capped at 75A due to package
0 0 50 100 150 Tmb (C) 200
0 0 50 100 150 200 Tmb (C)
Fig 2. Fig 1. Normalized total power dissipation as a function of mounting base temperature
Normalized continuous drain current as a function of mounting base temperature
103 ID (A)
Limit RDSon = VDS/ID
03ne75
tp = 10 s
102
100 s
Capped at 75 A due to package DC 10
1 ms
10 ms 100 ms
1 1 10 VDS (V) 102
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7107-40ATC_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 February 2009
4 of 15
NXP Semiconductors
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
5. Thermal characteristics
Table 5. Symbol Rth(j-a) Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ 50 Max 0.55 Unit K/W K/W thermal resistance from minimum footprint; mounted on a junction to ambient printed-circuit board thermal resistance from see Figure 4 junction to mounting base
1 Zth(j-mb) (K/W) 10-1 = 0.5 0.2 0.1 0.05 0.02 10-2 single shot
tp P
03ni29
=
tp T
t T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1 tp (s)
10
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7107-40ATC_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 February 2009
5 of 15
NXP Semiconductors
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
6. Characteristics
Table 6. Symbol V(BR)DG Characteristics Parameter drain-gate (Zener diode) breakdown voltage gate-source threshold voltage Conditions ID = 0.25 mA; VGS = 0 V; Tj = 25 C ID = 0.25 mA; VGS = 0 V; Tj = -55 C ID = 1 mA; VDS = VGS; Tj = 25 C; see Figure 9 ID = 1 mA; VDS = VGS; Tj = 175 C; see Figure 9 ID = 1 mA; VDS = VGS; Tj = -55 C; see Figure 9 IDSS V(BR)GSS drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 C VDS = 40 V; VGS = 0 V; Tj = 175 C gate-source breakdown IG = 1 mA; VDS = 0 V; Tj > -55 C; voltage Tj < 175 C IG = -1 mA; VDS = 0 V; Tj > -55 C; Tj < 175 C IGSS gate leakage current VDS = 0 V; VGS = 10 V; Tj = 25 C VDS = 0 V; VGS = -10 V; Tj = 25 C VDS = 0 V; VGS = 10 V; Tj = 175 C VDS = 0 V; VGS = -10 V; Tj = 175 C RDSon drain-source on-state resistance VGS = 10 V; ID = 50 A; Tj = 25 C; see Figure 7; see Figure 8 VGS = 10 V; ID = 50 A; Tj = 175 C; see Figure 7; see Figure 8 VF(TSD) SF(TSD) temperature sense diode forward voltage temperature sense diode temperature coefficient temperature sense diode forward voltage hysteresis total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 C; see Figure 12 IF = 250 A; Tj = 25 C IF = 250 A; Tj > -55 C; Tj < 175 C Min 40 40 2 1 20 20 648 -1.4 Typ 3 0.1 22 22 5 5 5.8 658 -1.54 Max 4 4.4 10 250 1000 1000 10 10 7 14 668 -1.68 Unit V V V V V A A V V nA nA A A m m mV mV/K
Static characteristics
VGS(th)
VF(TSD)hys
IF < 250 A; IF > 125 A; Tj = 25 C
25
32
50
mV
Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss ID = 25 A; VDS = 32 V; VGS = 10 V; Tj = 25 C; see Figure 14 108 21 42 4500 960 510 nC nC nC pF pF pF
BUK7107-40ATC_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 February 2009
6 of 15
NXP Semiconductors
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
Table 6. Symbol td(on) tr td(off) tf LD LS
Characteristics ...continued Parameter turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance source-drain voltage reverse recovery time recovered charge from upper edge of drain mounting base to centre of die; Tj = 25 C from source lead to source bond pad; Tj = 25 C IS = 25 A; VGS = 0 V; Tj = 25 C; see Figure 19 IS = 20 A; dIS/dt = -100 A/s; VGS = -10 V; VDS = 30 V; Tj = 25 C Conditions VDS = 30 V; RL = 1.2 ; VGS = 10 V; RG(ext) = 1 k; Tj = 25 C Min Typ 2 5.7 8.9 6.8 2.5 7.5 Max Unit s s s s nH nH
Source-drain diode VSD trr Qr 0.85 80 200 1.2 V ns nC
BUK7107-40ATC_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 February 2009
7 of 15
NXP Semiconductors
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
8
400 ID (A) 300 20 12
03ni65
03ni66
10
8.5
RDSon (m) 7
8
VGS (V) = 7.5
7
200 6.5
6
6
100 5.5
5
4 4.5
0 0 2 4 6 8 10 VDS (V)
4 5 10 15 VGS (V) 20
Fig 6. Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values
Drain-source on-state resistance as a function of gate-source voltage; typical values
2
12 RDSon (m) 10
03ni67
03ne89
a
VGS (V) = 5.5
1.5
6
8
6.5
7 8 10
1
6
4
0.5
2
0 0 20 40 60 80 100 120 ID (A)
0 -60
0
60
120
Tj (C)
180
Fig 7.
Drain-source on-state resistance as a function of drain current; typical values
Fig 8.
Normalized drain-source on-state resistance factor as a function of junction temperature
BUK7107-40ATC_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 February 2009
8 of 15
NXP Semiconductors
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
5 VGS(th) (V) 4 max
03aa32
10-1 ID (A) 10-2 min typ max
03aa35
3
typ
10-3
2
min
10-4
1
10-5
0 -60
10-6 0 60 120 Tj (C) 180 0 2 4 VGS (V) 6
Fig 9.
Gate-source threshold voltage as a function of junction temperature
Fig 10. Sub-threshold drain current as a function of gate-source voltage
03ni69
80 gfs (S) 60
03ni68
8000 C (pF) 6000 C iss
4000
40
Crss
Coss
2000
20
0 10-2 10-1 1
0 0 20 40 60 80 I (A) 100 D
10 V 102 DS (V)
Fig 11. Forward transconductance as a function of drain current; typical values
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
BUK7107-40ATC_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 February 2009
9 of 15
NXP Semiconductors
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
120 ID (A) 100
03ni70
10 VGS (V) 8 14 V
03ni71
80
6 VDS = 32 V
60
4
40
175 C
20
2
Tj = 25 C
0 0
0 2 4 VGS (V) 6
0
40
80
QG (nC) 120
Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values
03ni61
Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values
52 VDSR(CL) (V) 175 C
56 VDSR(CL) (V) 52 Tj = 25 C 175 C - 55 C
03ni62
51 Tj = 25 C 48 - 55 C 50 44
49 0 2 4 6 8 I (A) 10 D
40 0 1 2 -I 3 GS(CL) (mA)
Fig 15. Drain-source clamping voltage as a function of drain current; typical values
Fig 16. Drain-source clamping voltage as a function of gate-source current; typical values
BUK7107-40ATC_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 February 2009
10 of 15
NXP Semiconductors
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
700 VF (mV) 600
03ne84
-1.70 SF (mV/K) -1.60 max
03ne85
typ
500
-1.50
min 400 0 50 100 150 Tj (C) 200 -1.40 645
655
665 VF (mV)
675
Fig 17. Forward voltage of temperature sense diode as a function of junction temperature; typical values
Fig 18. Temperature coefficient of temperature sense diode as a function of forward voltage; typical values
100 IS (A) 80
03ni72
60
40
175 C
20
Tj = 25 C
0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V)
Fig 19. Reverse diode current as a function of reverse diode voltage; typical values
BUK7107-40ATC_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 February 2009
11 of 15
NXP Semiconductors
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
7. Package outline
Plastic single-ended surface-mounted package (D2PAK); 5 leads (one lead cropped) SOT426
A E A1
D1 mounting base
D
HD
3 1
Lp
2
4
5
b
c Q
e
e
e
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 1.70 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20
OUTLINE VERSION SOT426
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 05-03-09 06-03-16
Fig 20. Package outline SOT426 (D2PAK)
BUK7107-40ATC_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 February 2009
12 of 15
NXP Semiconductors
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
8. Revision history
Table 7. Revision history Release date 20090206 Data sheet status Product data sheet Change notice Supersedes BUK71_7907_40ATC-01 Document ID BUK7107-40ATC_2 Modifications:
* * *
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK7107-40ATC separated from data sheet BUK71_7907_40ATC-01. Product data sheet -
BUK71_7907_40ATC-01 (9397 750 09874)
20020809
BUK7107-40ATC_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 February 2009
13 of 15
NXP Semiconductors
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
9.3
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BUK7107-40ATC_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 6 February 2009
14 of 15
NXP Semiconductors
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: Rev. 02 -- 6 February 2009 Document identifier: BUK7107-40ATC_2

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